JPS6241428B2 - - Google Patents
Info
- Publication number
- JPS6241428B2 JPS6241428B2 JP54146668A JP14666879A JPS6241428B2 JP S6241428 B2 JPS6241428 B2 JP S6241428B2 JP 54146668 A JP54146668 A JP 54146668A JP 14666879 A JP14666879 A JP 14666879A JP S6241428 B2 JPS6241428 B2 JP S6241428B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- voltage
- gate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/378—Contact regions to the substrate regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14666879A JPS5670662A (en) | 1979-11-13 | 1979-11-13 | Insulated gate type field effect transistor |
| US06/195,683 US4394674A (en) | 1979-10-09 | 1980-10-09 | Insulated gate field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14666879A JPS5670662A (en) | 1979-11-13 | 1979-11-13 | Insulated gate type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5670662A JPS5670662A (en) | 1981-06-12 |
| JPS6241428B2 true JPS6241428B2 (en]) | 1987-09-02 |
Family
ID=15412907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14666879A Granted JPS5670662A (en) | 1979-10-09 | 1979-11-13 | Insulated gate type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5670662A (en]) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4587713A (en) * | 1984-02-22 | 1986-05-13 | Rca Corporation | Method for making vertical MOSFET with reduced bipolar effects |
| US5386136A (en) * | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
| US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
| DE69225552T2 (de) * | 1991-10-15 | 1999-01-07 | Texas Instruments Inc., Dallas, Tex. | Lateraler doppel-diffundierter MOS-Transistor und Verfahren zu seiner Herstellung |
| JP2004335990A (ja) | 2003-03-10 | 2004-11-25 | Fuji Electric Device Technology Co Ltd | Ｍｉｓ型半導体装置 |
| JP5560812B2 (ja) * | 2010-03-23 | 2014-07-30 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
-
1979
- 1979-11-13 JP JP14666879A patent/JPS5670662A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5670662A (en) | 1981-06-12 |
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